| Транзистор | Проводимость | Uкэ, В | Iк, A | hоэ | P, Вт | F | Описание, тип корпуса |
| BD139 | NPN | 80 | 1,5 | 40-250 | 12,5 | 190 МГц | power TO-126 |
| BD140 | PNP | 80 | 1,5 | 40-250 | 12,5 | 190 МГц | power TO-126 |
| PHE13005 | - | 700 | 8 | 8-40 | 75 | 0,16 mkS | Silicon Diffused Power TO220AB |
| PHE13007 | - | 700 | 8 | 5-30 | 75 | 0,04 mkS | Silicon Diffused Power TO220AB |
| BU208A | NPN | 1500 | 8 | - | 150 | 0,55 mkS | Multiepitaxial POWER TO-3 |
| BU4507AX | - | 1500 | 8(Isat-4) | - | 45 | 0,45 mkS | Silicon Diffused Power SOT399 |
| BU4507DF | - | 1500 | 8(Isat-4) | diode | 45 | 0,4 mkS | Silicon Diffused Power SOT199 |
| BU4508AX | - | 1500 | 8(Isat-5) | - | 45 | 0,48 mkS | Silicon Diffused Power SOT399 |
| BU508A | NPN | 1500 | 8 | - | 125 | 0,55 mkS | Multiepitaxial POWER TO218 |
| BU508AF | - | 1500 | 8(Isat-4,5) | - | 34 | 0,7 mkS | Silicon Diffused Power SOT199 |
| BU508AFI | NPN | 1500 | 8 | - | 50 | 0,55 mkS | Multiepitaxial POWER ISOWATT218 |
| BU508AW | - | 1500 | 8(Isat-4,5) | - | 125 | 0,7 mkS | Silicon Diffused Power SOT429 |
| BU508DF | - | 1500 | 8(Isat-4,5) | diode | 34 | 0,7 mkS | Silicon Diffused Power SOT129 |
| BU508DFI | NPN | 1500 | 8 | diode | 50 | 0,55 mkS | Multiepitaxial POWER ISOWATT218> |
| BU508DW | - | 1500 | 8(Isat-4,5) | diode | 125 | 0,7 mkS | Silicon Diffused Power SOT429 |
| BUT11APX | - | 1000 | 8(Isat-3) | 10-35 | 32 | 0,2 mkS | Silicon Diffused Power TO220AB |
| BUT12AF | - | 1000 | 8(Isat-5) | 10-35 | 32 | 0,8 mkS | Silicon Diffused Power TO220AB |
| ST1803DH | - | 1500 | 10 | diode | 32 | 0,6 mkS | Silicon Diffused Power ISOWATT218 |
